MR760 Datasheet, PDF (1/1 Pages) Shunye Enterprise – AUTONOTIVE OPEN JUNCTION BUTTON DIODE

MR760
AUTONOTIVE OPEN JUNCTION BUTTON DIODE
Features
Low leakage
Low forward voltage drop
High current capability
High forward surge current capability
Mechanical Data
Case: transfer molded plastic
Technology: vcauum soldered
Polarity: color ring denotes cathode
Lead: Plated lead, solderable per MIL-STD-202E method
208°C
Mounting position: Any
Maximum Ratings and Electrical Charactristics
Rating at 25°C ambient temperature unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameters
Symbol
s
MR760
Maximum repetitive peak reverse voltage
Maximum Average rectified forward current
at TC=110°C
Peak forward surge current 8.3mS single
half sine-wave superimposed on rated load
(JE DEC Method)
Maximum instantaneous forward voltage
drop at 100A
Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=150°C
Typical thermal resistance
Operating and storage temperature
VRRM
Io
IFSM
VF
IR
RθJC
TJ,TSTG
1000
35
420
1.25
2
300
1
.-50 TO 150
Units
Volts
Amps
Amps
Volts
uA
℃/W
℃
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