LL4448 Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Expitaxial Planar Diode

LL4448
SMALL SIGNAL SWITCHING DIODE
REVERSE VOLTAGE: 75 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial diode
High speed switching diode
500mW power dissipation
MECHANICAL DATA
Case:MINI-MELFglass case
Polarity:Color band denotes cathode
Weight: Approx 0.031 grams
MINI-MELF
Cathode indification
3.4 +0.3
-0.1
0.4 0.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
MAXIMUM RATINGS
Reverse voltage
V_R
Peak reverse voltage
V _RM
Average forw ard rectified current
Half w ave rectification w ith resistive load
IO
at VR=0V
Forw ard surge current at tp=1µ s
IFSM
Pow er dissipaton at t_amb=25^oC
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1) Valid prov ided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ I_F=5.0mA
@I_F=100mA
V_F
Leakage current at V_R=20V
I_R
at V_R=75V
I_R
111111111at V_R=20V T_J=150^oC
I_R
Capacitance at V_R=0V,f=1MH_z,V_HF=50mV
C_tot
Voltage rise w hen sw itching on
tested w ith 50mA pulses
V_fr
tp=0.1 S,rise time 30ns, fp=5 to 100KHz
Reverse recovery time
f rom I_F=10mA
t_rr
V_R=6V,R_L=100 ,at I_R=1mA
Thermal resistance junction to ambient
R _JA
Rectification effciency at 100MHz,V_RF=2V
V
1)Valid prov ided that electrodes are kept at ambient temperature
MIN
0.62
-
-
-
-
-
-
-
0.45
LL4448
75
100
150
2.0
500¹⁾
175
35-55--- +175
TYP
-
0.93
-
-
-
-
-
-
-
MAX
0.72
1.0
25.0
5.0
50.0
4.0
2.5
4.0
500¹⁾
-
www.shunyegroup.com.cn
UNITS
V
V
mA
A
mW
o_C
o_C
UNITS
V
nA
A
A
pF
V
ns
K/W
-