GL1A Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Surface Mount Si-Rectifiers

GL1A THRU GL1M
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
MECHANICAL DATA
Case:Minimelf,molded plastic over
passivated chip
Terminals:Solder Plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0023 ounces, 0.006 gram
Mounting position: Any
MiniMELF
C
B
A
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.130
.146
B
.008
.016
C
.055
.059
MM
MIN
3.30
.20
1.40
MAX
3.70
.40
1.50
NOTE
∅
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
GL GL GL GL GL
1A 1B 1D 1G 1J
Maximum recurrent peak reverse voltage V_RRM 50
100
200
400
600
Maximum RMS voltage
V_RMS 35
70
140 280 420
Maximum DC blocking voltage
V_DC 50 100 200 400 600
Maximum average forword
rectified current T_A=75
I_(AV)
1.0
Peak forward surge current 8.3ms single
half-sine-wave superimposed
I_FSM
30
on rated load (JEDEC method)
Maximum forward voltage at 1.0A
Maximum DC reverse current @T_A=25
at rated DC blockjing voltage @T_A=125
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating temperature range
Storage temperature range
V_F
I_R
C_j
R_jθL
R_jθA
T_j
T_STG
1.1
5.0
50
15
20
50
- 55 --- + 175
- 55 --- + 175
NOTES:1. Measured at 1.0MHz and applied average voltage of 4.0V DC.
2. Thermal resistance junction to lead, 6.0 mm ² coppeer pads to each terminal.
3. Thermal resistance junction to ambient, 6.0 mm ² coppeer pads to each terminal.
GL
1K
800
560
800
GL
1M
1000
700
1000
UNITS
V
V
V
A
A
V
A
pF
/W
/W
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