GBU8M Datasheet, PDF (1/2 Pages) America Semiconductor, LLC – BRIDGE RECTIFIERS

GBU8A - GBU8M
SILICON BRIDGE RECTIFIERS
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
22.3± 0.3
3.7± 0.35
GBU
4 45°
3.8± 0.2
-
AC
+
2.5± 0.2
2.4± 0.2
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
FEATURES
Rating to 1000V PRV
Surge overload rating to 200 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Glass passivated junctions
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current @T_C=100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=125
Operating junction temperature range
Storage temperature range
GBU
8A
V_RRM 50
V_RMS 35
V_DC 50
I_F(AV)
GBU
8B
100
70
100
GBU
8D
200
140
200
GBU
8G
400
280
400
8.0
GBU
8J
600
420
600
GBU
8K
800
560
800
GBU
8M
UNITS
1000
V
700
V
1000
V
A
I_FSM
200.0
A
V_F
1.0
V
I_R
5.0
0.5
μA
mA
T_J
T_STG
- 55 ---- + 150
- 55 ---- + 150
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