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GBU4A-GBU4M Datasheet, PDF (1/2 Pages) Shunye Enterprise – SILICON BRIDGE RECTIFIERS
GBU4A THRU GBU4M
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 4.0 Amperes
GBU
22.3± 0.3
3.7± 0.35
4 45°
3.8± 0.2
-
AC
+
2.5± 0.2
2.4± 0.2
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
FEATURES
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
Glass passivated chip junctions
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU GBU GBU GBU GBU
4A
4B
4D
4G
4J
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM 50
VRMS 35
VDC 50
Maximum average f orw ard Tc=100 (note 1)
output current @TA=40 (note 2)
IF (AV)
Peak f orw ard surge current
8.3ms single half -sine-w ave
IF SM
superimposed on rated load
100 200 400 600
70
140 280 420
100 200 400 600
4.0
3.0
150.0
Maximum instantaneous f orw ard voltage
at 2.0 A
VF
1.0
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
5.0
500.0
Typical junction capacitance per leg (note 3)
CJ
100
Typical thermal resistance per leg (note 2)
RθJA
22.0
(note 1)
RθJC
4.2
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 1.6x1.6x0.06" thick (4.0x4.0x0.15cm ) AI. Plate.
2. U nits m ounted on P.C .B. with 0.5x0.5" (12x12m m) copper pads and 0.375" (9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
GBU
4K
800
560
800
45
GBU
4M
1000
700
1000
UNITS
V
V
V
A
A
V
μA
pF
/W
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