CJMPD8 Datasheet, PDF (1/5 Pages) Zhaoxingwei Electronics ., Ltd – DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

SMD Type
MOSFET
Features
CJMPD08
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
 Low On-Resistance
 70mΩ @VGS = -4.5V
 85mΩ @VGS = -2.5V
 86mΩ (typ) @VGS = -1.8V
 Low Gate Threshold Voltage, -0.9V Max
 Fast Switching Speed
 Low Input/Output Leakage
 Low Profile, 0.5mm Max Height
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability
 Case: U-DFN2020-6 Type B
 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – NiPdAu Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 ^e4
 Weight: 0.0065 grams (Approximate)
U-DFN2020-6
Type B
D2
D2
G1
S1
Pin1
S2
G2
D1
D1
Bottom View
G1
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
D1
S1
Symbol
VDSS
VGSS
ID
IDM
D2
G2
S2
Equivalent Circuit
Value
-20
±12
-3.8
-13
Units
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
R_JA
TJ, TSTG
Value
1.4
89
-55 to +150
Unit
W
°C/W
°C