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BAS32L Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode | |||
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BAS32L
HIGH SPEED DIODE
Reverse Voltage - 75 Volts
Forward Current - 200 mApere
FEATURES
⢠Small hermetically-sealed glass SMD package
⢠High switching speed
⢠Continuous reverse voltage
⢠Repetitive peak reverse voltage
⢠Repetitive peak forward current
APPLICATION
⢠High-Speed Switching
⢠Fast Logic Applications
Absolute Maximum Ratings (Ta = 25oC)
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
VRRM
75
V
Continuous reverse voltage
VR
75
V
Continuous forward current (note1)
IF
200
mA
Repetitive peak forward current
IFRM
450
mA
Non-repetitive peak forward current
Square wave, Tj = 25 â prior to surge t=1μs
4
t=1ms
IFSM
1
A
t=1s
0.5
Power dissipation
Junction temperature
Storage temperature range
Ptot
500
mW
Tj
200
OC
TS
-65 to +200
OC
Thermal resistance from junction to tie point
Rthjtp
300
K/W
Thermal resistance from junction to ambient
Rthja
350
K/W
Note 1: Device mounted on an FR4printed- circuit board.
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