1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

1N4148
SMALL SIGNAL SWITCHING DIODE
DO-34(GLASS)
DO-35(GLASS)
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.106 (2.9)
MAX
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.165 (4.2)
MAX
0.017(0.42)
TYP
1.0 2(26.0)
MIN.
0.020(0.52)
TYP
1.0 2(26.0)
MIN.
Dimensions in inches and (millimeters)
FEATURES
Silicon epitaxial planar diode
Switching diodes
500mw power dissipation
High temperature soldering guaranteed
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: DO-34\DO-35 glass sealed envelope.
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.003 ounce, 0.09 grams(DO-34)
0.005 ounce, 0.14 grams(DO-35)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
Maximum repetitive peak reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum average forward rectified current
I(AV)
0.375”(9.5mm) lead length at TA=25 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10mA
VF
Maximum DC reverse current TA=25 C VR=75V
at rated DC blocking voltage TA=100 C VR=20V
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Operating junction and storage temperature range
NOTES:
TJ,TSTG
1.Test condition:IF=10mA,IR=10mA,Irr=1mA,VR=6V,RL=100W.
2.Measured at 1.0 MHz and applied reverse voltage of 4.0 volts
1N4148
100
75
150
500
1.0
5.0
50
4.0
4.0
-65 to +200
UNITS
VOLTS
VOLTS
mAmps
mAmps
Volts
uA
ns
pF
C
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