English
Language : 

F11F60C3M Datasheet, PDF (2/2 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET
F11F60C3M
■特性図 CHARACTERISTIC DIAGRAMS
ग़ྗಛੑ
Typical Output Characteristics
̎̌
̫̍̌
̫̔
̫̒
5Dˆ
5:1
1VMTF NFBTVSFNFOU
̍̑
̫̑
̍̌
఻ୡಛੑ
Transfer Characteristics
̎̌
̩̲ʵ̑̑ˆ
̎̑ˆ
̍̑
̍̌
ɹ̍̌̌ˆ
ɹ̍̑̌ˆ
υϨΠϯɾιʔεؒΦϯ఍߅ᴷυϨΠϯిྲྀ
Static Drain-Source On-static Resistance vs Drain Current
̍̌
7(4ʹ̍̌7
5Dʹ̎̑ˆ
̑
5:1
1VMTF NFBTVSFNFOU
̎
̍
̌ɽ̑
̑
7̜4̫̐
̌̌
̑
̍̌
̍̑
̎̌
̎̑
%SBJO 4PVSDF 7PMUBHF 7%4ʤ7ʥ
̑
7%47
5:1
1VMTF NFBTVSFNFOU
̌̌
̑
̍̌
̍̑
̎̌
(BUF 4PVSDF 7PMUBHF 7(4ʤ7ʥ
̌ɽ̎
̌ɽ̍̌ɽ̍ ̌ɽ̎
̌ɽ̑ ̍ ̎
̑ ̍̌ ̎̎
%SBJO $VSSFOU *%ʤ"ʥ
υϨΠϯɾιʔεؒΦϯ఍߅ᴷέʔεԹ౓
Static Drain-Source On-static Resistance vs Case Temperature
̍̌
1VMTF NFBTVSFNFOU
̍
*%̑̑ "
̌ɽ̍
̌ɽ̌̍ʵ̑̑
7(4ʹ̍̌7
1VMTF UFTU
5:1
̌
̑̌
̍̌̌
̍̑̌
$BTF ̩FNQFSBUVSF 5Dʤˆʥ
ήʔτ͖͍͠஋ిѹᴷέʔεԹ౓
Gate Threshold Voltage vs Case 5emperature
̑
1VMTF NFBTVSFNFOU
̐
̏
̎
̍
̌ʵ̑̑
7%4ʹ̍̌7
*%̌̑ N"
5:1
̌
̑̌
̍̌̌
̍̑̌
$BTF 5FNQFSBUVSF 5Dʤˆʥ
҆શಈ࡞ྖҬ
Safe Operating Area
̍̌̌
̏̏
̎̎
̍̍
ЖT
3%4Ê¢POÊ£
3FTUSJDUFETQBDF
̍
̌ɽ̍
ЖT
ЖT
NT
NT
%$
5Dʹ̎̑ˆ
4JOHMF QVMTF
̌ɽ̌̍̍
̍̌
̍̌̌
̒̌̌
%SBJO 4PVSDF 7PMUBHF 7%4ʤ7ʥ
ա౉೤఍߅
Transient Thermal Impedance
̍̌
̍
Ωϟύγλϯεಛੑ
Capacitance Characteristics
̍̌̌̌̌
ВKD
̍̌̌̌
̸̘͂͂
̘P͂͂
̍̌̌
શଛࣦݮগ཰ ᴷέʔεԹ౓
Power Derating - Case Temperature
̍̌̌
̔̌
̒̌
̌̍
̍̌
̘S͂͂
̐̌
̌̌ ̍
̌̌ ̌̍̍̌̑ ̍̌̐ ̍̌̏ ̍̌̎ ̍̌̍ ̍̌̌ ̍̌̍ ̍̌̎ ̍̌̏
5JNF UʤTʥ
ήʔτνϟʔδಛੑ
Gate Charge Characteristics
̑̌̌
7%4
̐̌̌
̏̌̌
7%%̫̐̌̌
̫̎̌̌
̫̍̌̌
̎̌
*%̍̍"
5:1
̍̑
7̜4
̍̌
̎̌̌
̍
Gʹ̍.)[
5Dʹ̎̑ˆ
5:1
̌̍̌
̎̌
̐̌
̒̌
̔̌
̍̌̌
%SBJO 4PVSDF 7PMUBHF 7%4ʤ̫ʥ
̎̌
̌̌
̎̑ ̑̌ ̓̑ ̍̌̌ ̍̎̑ ̍̑̌
$BTF 5FNQFSBUVSF 5Dʤˆʥ
̑
̍̌̌
̌̌
̍̑
̏̌
̐̑
̒̌
̓̑̌
5PUBM (BUF $IBSHF 2HʤO$ʥ
* Sinewaveは 50Hzで測定しています。
* 50Hzsinewaveisusedformeasurements.
www.shindengen.co.jp/product/semi/
(MOSFET〈2010.06〉)