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T4R2F90SB Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – IGBT | |||
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T4R2F90SB
IGBT
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Packageï¼FTO-220AGï¼3pinï¼
Unitï¼mm
900V4.2A
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Feature
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IsolatedPackage
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HighVoltage
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HighSpeedSwitching
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%BUF DPEF
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Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
â絶対æ大å®æ ¼ AbsoluteMaximum Ratingsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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Ratings
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Unit
ä¿å温度
StorageTemperature
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ChannelTemperature
ã³ã¬ã¯ã¿ã»ã¨ããã¿éé»å§
Collector-EmitterVoltage
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Gate-EmitterVoltage
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ContinuousCollectorCurrent(DC)
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ContinuousCollectorCurrent(Peak)
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TotalPowerDissipation
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RepetitiveAvalancheCurrent
åçºã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
SingleAvalancheEnergy
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RepetitiveAvalancheEnergy
絶ç¸èå§
DielectricStrength
ç· ãä»ããã«ã¯
MountingTorque
Tstg
Tch
VCES
VGES
IC
ICP
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
PT
IAR StartingTch=25â,Tchâ¦150â
EAS StartingTch=25â,Tchâ¦150â
EAR StartingTch=25â,Tchâ¦150â
Vdis
ä¸æ¬ç«¯åã»ã±ã¼ã¹éï¼AC1åéå°å
Terminalstocase,AC1minute
TOR
ï¼æ¨å¥¨å¤ï¼0.3Nã»mï¼
(Recommendedtorque:0.3Nã»m)
ï¼55ï½150
150
900
±30
4.2
8.4
67.5
4.2
35
3.5
2
0.5
â
V
A
W
A
mJ
mJ
kV
Nã»m
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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MIN TYP MAX Unit
ã³ã¬ã¯ã¿ã»ã¨ããã¿ééä¼é»å§
Collector-EmitterBreakdownVoltage
Vï¼BRï¼CES
ICï¼1mA,VGEï¼0V
ã³ã¬ã¯ã¿é®æé»æµ
ZeroGateVoltageCollectorCurrent
ICES VCEï¼900V,VGEï¼0V
ã²ã¼ãæ¼ãé»æµ
Gate-EmitterLeakageCurrent
IGES VGEï¼Â±30V,VCEï¼0V
ã³ã¬ã¯ã¿ã»ã¨ããã¿éãªã³é»å§
StaticCollector-EmitterSaturationVoltage
VCEï¼satï¼
ICï¼4.2A,VGEï¼10V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH ICï¼1mA,VCEï¼10V
ç±æµæ
ThermalResistance
θjc
æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg VCCï¼400V,VGEï¼10V,ICï¼4.2A
å
¥å容é
InputCapacitance
Cies
帰é容é
ReverseTransferCapacitance
Cres VCEï¼10V,VGEï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coes
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr ICï¼4.2A,RLï¼107Ω,VCCï¼450V,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGEï¼ï¼ï¼ï¼10V,VGEï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
900 â â
V
â â 10
μA
â â ±0.1
â
8 10
V
2.5 3.0 3.5
â â 1.85 â/W
â 16 â nC
â 330 â
â 24 â pF
â 55 â
â 78 â
â 58 â
ns
â 165 â
â 65 â
ï¼IGBT-pã2014.03ãï¼
www.shindengen.co.jp/product/semi/
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