S1NBB80 Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Bridge Diode

SMD/DIP
S1NBB80
800V 1A
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GPS
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Bridge Diode
؍֎˙ਤɹOUTLINE

Packageɿ1NAʢSMDʣ

ᶆᶃ
඼໊ུ߸
5ZQF
/P
S1NBB
ڃදࣔʢྫʣ
$MBTT
ϩοτ߸هʢྫʣ
%BUF
DPEF
8000
ᶅᶄ
6OJU

NN
ᶆʵ
ᶃʴ
ᶅʙ
ᶄʙ

Packageɿ1NAʢDIPʣ

ᶆᶃ
඼໊ུ߸
5ZQF
/P
ڃදࣔʢྫʣ
$MBTT
ϩοτ߸هʢྫʣ
%BUF
DPEF
SINBB
8000
ᶅᶄ
6OJU

NN
ᶆʵ
ᶃʴ
ᶅʙ
ᶄʙ
ܗ֎ਤʹ͍ͭͯ͸৽ి ݩ8FC αΠτຢ͸ʪ൒ಋମ੡඼ҰཡදʫΛ͝ࢀর
Լ͍͞ɻೀҹදࣔʹ͍ͭͯ͸ೀҹ࢓༷Λ֬͝ೝԼ͍͞ɻ
For details of outline dimensions, refer to our web site or the Semiconductor
Terminal Connection.”
˙ఆ֨දɹ
RRAATTININGGSS
˔ઈର࠷େఆ֨
Absolute Maximum Ratingsʢࢦఆͷͳ͍৔߹
5l  ˆʗVOMFTT
PUIFSXJTF
TQFDJ
Ê£
߲ɹɹ໨

Item

߸ه_৚ɹÝ

Symbol Conditions
඼ɹ໊

Type
No.
S1NBB80
อଘԹ౓

Storage Temperature
઀߹෦Թ౓

Operation Junction Temperature
ͤΜ಄ిٯѹ

Maximum Reverse Voltage
5TUH

5K

73.

ʵʙ





ग़ྗిྲྀ

Average Rectified Forward Current
)[
ਖ਼ݭ೾ɼ఍߅ෛՙ

*0

50Hz sine wave,
Resistance load
5Bʹ ˆ
^

5Bʹˆ
^





ͤΜ಄αʔδॱిྲྀ

Peak Surge Forward Current
*'4.

)[
ਖ਼ݭ೾ɼඇ܁Γฦ̍͠αΠΫϧͤΜ಄஋ɼ5K  ˆ

50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25ˆ



ిྲྀೋ৐࣌ؒੵ

Current Squared Time
*^U

NTʽUʻNTɼ5K


ˆɼ
̍ _pe^ૉ_{r d}^ࢠ_io^౰_de^{ͨΓͷ֨ن஋}



୯Ґ

Unit
ˆ

ˆ

7

"

"

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ؾి˔తɾ೤తಛੑɹElectrical Characteristicsʢࢦఆͷͳ͍৔߹
5l  ˆʗVOMFTT
PUIFSXJTF
TQFDJ
Ê£
ॱిѹ

Forward Voltage

ྲྀిٯ
Reverse Current
೤఍߅

Thermal Resistance
7'

*3

ВKl
*'  "

ύϧεଌఆɼ̍ૉࢠ౰ͨΓͷ֨ن஋

Pulse measurement, per diode
73 73.

ύϧεଌఆɼ̍ૉࢠ౰ͨΓͷ֨ن஋
Pulse measurement, per diode
઀߹෦ɾϦʔυؒ

Junction to Lead
ВKB

઀߹෦ɾपғؒ

Junction to Ambient

."9
_



."9 _



."9 _


^
."9 


^
."9 

^{ɿϓϦϯτج൘࣮૷ɼಔഩύλʔϯNN}

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On glass-epoxy substrate, copper soldering pad area 324mm^{2
ɿϓϦϯτج൘࣮૷ɼಔഩύλʔϯNN}

ɹ


On glass-epoxy substrate, copper soldering pad area 101mm²
7

Ж"

ˆ8

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