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P70F5EN Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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P70F5EN
PowerMOSFET
â å¤è¦³å³ OUTLINE
Packageï¼FTO-220AGï¼3pinï¼
Unitï¼mm
50V70A
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Feature
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IsolatedPackage
ç
LowRON
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10VGateDrive
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LowCapacitance
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%BUF DPEF
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70F5EN
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marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
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Item
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Symbol
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Conditions
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Ratings
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Unit
ä¿å温度
StorageTemperature
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ChannelTemperature
ãã¬ã¤ã³ã»ã½ã¼ã¹éé»å§
Drain-SourceVoltage
ã²ã¼ãã»ã½ã¼ã¹éé»å§
GateSourceVoltage
ãã¬ã¤ã³é»æµï¼ç´æµï¼
ContinuousDrainCurrent(DC)
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ContinuousDrainCurrent(Peak)
å
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TotalPowerDissipation
åçºã¢ãã©ã³ã·ã§é»æµ
SingleAvalancheCurrent
åçºã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
SingleAvalancheEnergy
絶ç¸èå§
DielectricStrength
ç· ãä»ããã«ã¯
MountingTorque
Tstg
Tch
VDSS
VGSS
ID
IDP
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
PT
IAS StartingTch=25â,Tchâ¦150â
EAS StartingTch=25â,Tchâ¦150â
Vdis ä¸æ¬ç«¯åã»ã±ã¼ã¹éï¼AC1åéå°å
Terminalstocase,AC1minute
TOR ï¼æ¨å¥¨å¤ï¼0. 3Nã»mï¼
(Recommendedtorque:0.3Nã»m)
ï¼55ï½150
150
50
±20
70
280
53
70
245
2
0.5
â
V
A
W
A
mJ
kV
Nã»m
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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MIN TYP MAX Unit
ãã¬ã¤ã³ã»ã½ã¼ã¹ééä¼é»å§
Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼50V,VGSï¼0V
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
IGSS VGSï¼Â±20V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼35A,VDSï¼10V
R ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance ï¼DSï¼ON
IDï¼35A,VGSï¼10V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwardVoltage
VSD
ISï¼70A,VGSï¼0V
ç±æµæ
ThermalResistance
θjc æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg
ã²ã¼ãã»ã½ã¼ã¹é»è·é
GatetoSourceCharge
Qgs VDDï¼40V,VGSï¼10V,IDï¼70A
ã²ã¼ãã»ãã¬ã¤ã³é»è·é
GatetoDrainCharge
Qgd
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼25V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼35A,RLï¼0.71Ω,VDDï¼25V,Rgï¼0Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
ãã¤ãªã¼ãéå復æé
DiodeReverseRecoveryTime
ãã¤ãªã¼ãéå復é»è·é
DiodeReverseRecoveryCharge
trr
Qrr
IFï¼70A,VGSï¼0V,di/dtï¼100A/μs
50 â â
V
â
â
â
â
1
±0.1
μA
25 â â
S
â 2.7 3.2 mΩ
2.0 3.0 4.0
â â 1.5
V
â â 2.35 â/W
â 100 â
â 26 â nC
â 38 â
â 5500 â
â 440 â pF
â 955 â
â 13 â
â
â
45 â
53 â
ns
â 44 â
â
52 â
ns
â 86 â nC
ï¼MOS-pã2014.03ãï¼
www.shindengen.co.jp/product/semi/
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