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P25B6EB Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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P25B6EB
PowerMOSFET
â å¤è¦³å³ OUTLINE
Packageï¼FB
Unitï¼mm
60V25A
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Feature
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marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
â絶対æ大å®æ ¼ AbsoluteMaximum Ratingsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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Ratings
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Unit
ä¿å温度
StorageTemperature
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ChannelTemperature
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Drain-SourceVoltage
ã²ã¼ãã»ã½ã¼ã¹éé»å§
GateSourceVoltage
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ContinuousDrainCurrent(DC)
ãã¬ã¤ã³é»æµï¼ãã¼ã¯ï¼
ContinuousDrainCurrent(Peak)
å
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TotalPowerDissipation
åçºã¢ãã©ã³ã·ã§é»æµ
SingleAvalancheCurrent
åçºã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
SingleAvalancheEnergy
Tstg
Tch
VDSS
VGSS
ID
IDP
PT
IAS
EAS
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
StartingTch=25â,Tchâ¦150â
StartingTch=25â,Tchâ¦150â
ï¼55ï½150
â
150
60
V
±20
25
A
70
35
W
16
A
29
mJ
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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MIN TYP MAX Unit
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Drain-SourceBreakdownVoltage
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
IDSS VDSï¼60V,VGSï¼0V
IGSS VGSï¼Â±20V,VDSï¼0V
gfs IDï¼12.5A,VDSï¼10V
60 â â
V
ââ
1
μA
â â ±10
6.0 12.0 â
S
R ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance ï¼DSï¼ON
IDï¼12.5A,VGSï¼10V
IDï¼12.5A,VGSï¼4.5V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwardVoltage
VSD
ISï¼25A,VGSï¼0V
ç±æµæ
ThermalResistance
θjc æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg
ã²ã¼ãã½ã¼ã¹é»è·é
GatetoSourceCharge
Qgs VDDï¼48V,VGSï¼10V,IDï¼25A
ã²ã¼ããã¬ã¤ã³é»è·é
GatetoDrainCharge
Qgd
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼25V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼12.5A,RLï¼2.4Ω,VDDï¼30V,Rgï¼0Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
â 23.0 29.0
mΩ
â 29.5 40.0
1.5 2.0 2.5
V
â â 1.5
â â 3.55 â/W
â 14.5 â
â 3.3 â nC
â 4.5 â
â 785 â
â 45 â pF
â 115 â
â 18 â
â 110 â
ns
â 55 â
â 80 â
ï¼MOSFETã2012.06ãï¼
www.shindengen.co.jp/product/semi/
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