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P1R5B40HP2 Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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PowerMOSFET
P1R5B40HP2
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Packageï¼FB
Unitï¼mm
400V1.5A
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Feature
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SMD
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LowNoise
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LowCapacitance
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HighAvalancheDurability,Highdi/dtDurability
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marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
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Item
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Symbol
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Conditions
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Ratings
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Unit
ä¿å温度
StorageTemperature
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ChannelTemperature
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Drain-SourceVoltage
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GateSourceVoltage
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ContinuousDrainCurrent(DC)
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ContinuousDrainCurrent(Peak)
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ContinuousSourceCurrentï¼DCï¼
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TotalPowerDissipation
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RepetitiveAvalancheCurrent
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SingleAvalancheEnergy
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RepetitiveAvalancheEnergy
ãã¬ã¤ã³ã»ã½ã¼ã¹ãã¤ãªã¼ã di/dtèé
Drain-SourceDiodedi/dtStrength
Tstg
Tch
VDSS
VGSS
ID
IDP
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
IS
PT
IAR StartingTch=25â,Tchâ¦150â
EAS StartingTch=25â,Tchâ¦150â
EAR StartingTch=25â,Tchâ¦150â
di/dt Isï¼1.5A,Tcï¼25â
ï¼55ï½150
150
400
±30
1.5
6
1.5
35
1.5
15
1.5
350
â
V
A
W
A
mJ
mJ
A/μs
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Symbol
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Conditions
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MIN TYP MAX Unit
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Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼400V,VGSï¼0V
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Gate-SourceLeakageCurrent
IGSS VGSï¼Â±25V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼0.75A,VDSï¼10V
R ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance ï¼DSï¼ON
IDï¼0.75A,VGSï¼10V
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GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
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Source-DrainDiodeForwardVoltage
VSD
ISï¼ 0.75A,VGSï¼0V
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ThermalResistance
θjc æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg VDDï¼320V,VGSï¼10V,IDï¼1.5A
å
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InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼50V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼0.75A,RLï¼200Ω,VDDï¼150V,Rgï¼50Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
400
â
â
0.6
â
3.00
â
â
â
â
â
â
â
â
â
â
â
â
â
1.3
4.2
3.75
â
â
3.9
120
3.4
20
10
17
24
13
â
V
100
±10 μA
â
S
5.0 Ω
4.50
1.5
V
3.55 â/W
â nC
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â pF
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ï¼MOS-pã2014.03ãï¼
www.shindengen.co.jp/product/semi/
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