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P15F60HP2 Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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PowerMOSFET
P15F60HP2
â å¤è¦³å³ OUTLINE
Packageï¼FTO-220AGï¼3pinï¼
Unitï¼mm
600V15A
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é«ã¢ãã©ã³ã·ã§èéãé« di/dtèé
Feature
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HighVoltage
ç
LowRON
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FastSwitching
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HighAvalanchedurability,Highdi/dtdurability
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%BUF DPEF
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15F60H2
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Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
â絶対æ大å®æ ¼ AbsoluteMaximum Ratingsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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Ratings
åä½
Unit
ä¿å温度
StorageTemperature
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ChannelTemperature
ãã¬ã¤ã³ã»ã½ã¼ã¹éé»å§
Drain-SourceVoltage
ã²ã¼ãã»ã½ã¼ã¹éé»å§
GateSourceVoltage
ãã¬ã¤ã³é»æµï¼ç´æµï¼
ContinuousDrainCurrent(DC)
ãã¬ã¤ã³é»æµï¼ãã¼ã¯ï¼
ContinuousDrainCurrent(Peak)
ã½ã¼ã¹é»æµï¼ç´æµï¼
ContinuousSourceCurrentï¼DCï¼
å
¨æ失
TotalPowerDissipation
ç¹°ãè¿ãã¢ãã©ã³ã·ã§é»æµ
RepetitiveAvalancheCurrent
åçºã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
SingleAvalancheEnergy
ç¹°ãè¿ãã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
RepetitiveAvalancheEnergy
ãã¬ã¤ã³ã»ã½ã¼ã¹ãã¤ãªã¼ãèé
Drain-SourceDiodedi/dt
絶ç¸èå§
DielectricStrength
ç· ãä»ããã«ã¯
MountingTorque
Tstg
Tch
VDSS
VGSS
ID
IDP
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
IS
PT
IAR StartingTch=25â,Tchâ¦150â
EAS StartingTch=25â,Tchâ¦150â
EAR StartingTch=25â,Tchâ¦150â
di/dt Isï¼15A,Tcï¼25â
Vdis ä¸æ¬ç«¯åã»ã±ã¼ã¹éï¼AC1åéå°å
Terminalstocase,AC1minute
TOR ï¼æ¨å¥¨å¤ï¼0. 3Nã»mï¼
(Recommendedtorque:0.3Nã»m)
ï¼55ï½150
150
600
±30
15
60
15
95
15
80
8
350
2
0.5
â
V
A
W
A
mJ
mJ
A/μs
kV
Nã»m
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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MIN TYP MAX Unit
ãã¬ã¤ã³ã»ã½ã¼ã¹ééä¼é»å§
Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼600V,VGSï¼0V
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
IGSS VGSï¼Â±30V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼7.5A,VDSï¼10V
R ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance ï¼DSï¼ON
IDï¼7.5A,VGSï¼10V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwardVoltage
VSD
ISï¼7.5A,VGSï¼0V
ç±æµæ
ThermalResistance
θjc æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg VDDï¼400V,VGSï¼10V,IDï¼15A
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼50V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼7.5A,RLï¼20Ω,VDDï¼150V,Rgï¼50Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
600 â â
V
â
â
â
â
100
±0.1
μA
9 18 â
S
â 0.41 0.49 Ω
3.0 3.75 4.5
â â 1.5
V
â â 1.32 â/W
â 37 â nC
â 1750 â
â
7 â pF
â 150 â
â 37 â
â 49 â
â 129 â
ns
â 35 â
ï¼MOSFETã2012.06ãï¼
www.shindengen.co.jp/product/semi/
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