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P13LA10EL Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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P13LA10EL
PowerMOSFET
â å¤è¦³å³ OUTLINE
Packageï¼LA
Unitï¼mm
100V13A
ç¹é·
ç
èå SMD
ç
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ç
ä½ãªã³æµæ
ç
ä½å®¹é
Feature
ç
ThinPackage
ç
4.5VGateDrive
ç
LowRON
ç
LowCapacitance
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5ZQF /P
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%BUF DPEF
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13A10EL
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Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
â絶対æ大å®æ ¼ AbsoluteMaximum Ratingsï¼æå®ã®ãªãå ´å Taï¼25â/unlessotherwisespecifiedï¼
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Item
è¨å·
Symbol
æ¡ä»¶
Conditions
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Ratings
åä½
Unit
ä¿å温度
StorageTemperature
ãã£ãã«æ¸©åº¦
ChannelTemperature
ãã¬ã¤ã³ã»ã½ã¼ã¹éé»å§
Drain-SourceVoltage
ã²ã¼ãã»ã½ã¼ã¹éé»å§
GateSourceVoltage
ãã¬ã¤ã³é»æµï¼ç´æµï¼
ContinuousDrainCurrent(DC)
ãã¬ã¤ã³é»æµï¼ãã¼ã¯ï¼
ContinuousDrainCurrent(Peak)
å
¨æ失
TotalPowerDissipation
åçºã¢ãã©ã³ã·ã§é»æµ
SingleAvalancheCurrent
åçºã¢ãã©ã³ã·ã§ã¨ãã«ã®ã¼
SingleAvalancheEnergy
Tstg
Tch
VDSS
VGSS
ID
IDP
PT
IAS
EAS
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
StartingTch=25â,Tchâ¦150â
StartingTch=25â,Tchâ¦150â
ï¼55ï½150
150
â
100
±20
V
13
A
52
1.7
W
13
A
23
mJ
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Taï¼25â/unlessotherwisespecifiedï¼
é
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Item
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Symbol
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Conditions
è¦æ ¼å¤ Ratings åä½
MIN TYP MAX Unit
ãã¬ã¤ã³ã»ã½ã¼ã¹ééä¼é»å§
Drain-SourceBreakdownVoltage
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
IDSS VDSï¼100V,VGSï¼0V
IGSS VGSï¼Â±20V,VDSï¼0V
gfs IDï¼6.5A,VDSï¼10V
R ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance ï¼DSï¼ON
IDï¼6.5A,VGSï¼10V
IDï¼6.5A,VGSï¼4.5V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwardVoltage
VSD
ISï¼13A,VGSï¼0V
ç±æµæ
ThermalResistance
θja æ¥åé¨ã»å¨å²é
Junctiontoambient
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg
ã²ã¼ãã»ã½ã¼ã¹é»è·é
GatetoSourceCharge
Qgs VDDï¼80V,VGSï¼10V,IDï¼13A
ã²ã¼ãã»ãã¬ã¤ã³é»è·é
GatetoDrainCharge
Qgd
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼25V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼6.5A,RLï¼7.7Ω,VDDï¼50V,Rgï¼0Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
ãã¤ãªã¼ãéå復æé
DiodeReverseRecoveryTime
ãã¤ãªã¼ãéå復é»è·é
DiodeReverseRecoveryCharge
trr
Qrr
IFï¼13A,VGSï¼0V,di/dtï¼100A/μs
100 â â
V
ââ
1 μA
â â ±0.1
12 24 â
S
â 16.0 20.0
â 17.5 23.4 mΩ
1.5 2.0 2.5 V
â â 1.5
â â 73 â/W
â 57 â
â 8.5 â nC
â 15 â
â 2950 â
â 120 â pF
â 250 â
â 8.5 â
â 7.0 â
ns
â 24.0 â
â 3.5 â
â
60 â
ns
â 140 â nC
ï¼MOS-pã2014.03ãï¼
www.shindengen.co.jp/product/semi/
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