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F47W60C3 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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PowerMOSFET
F47W60C3
600V47A
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Feature
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LowRON
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FastSwitching
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%BUF DPEF
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$POUSPM /P
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5ZQF /P
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47W60C3
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Unitï¼mm
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4
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marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
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Item
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Symbol
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Conditions
ä¿å温度
StorageTemperature
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ChannelTemperature
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Drain-SourceVoltage
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Drain-SourceVoltage
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ContinuousDrainCurrent(DC)
ãã¬ã¤ã³é»æµï¼ãã¼ã¯ï¼
ContinuousDrainCurrent(Peak)
ã½ã¼ã¹é»æµï¼ç´æµï¼
ContinuousSourceCurrent(DC)
å
¨æ失
TotalPowerDissipation
ç· ãä»ããã«ã¯
MountingTorque
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
PT
TOR
ï¼æ¨å¥¨å¤ï¼0.5Nã»mï¼
(Recommendedtorque:0.5Nã»m)
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼ 25âï¼
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Item
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Symbol
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Conditions
ãã¬ã¤ã³ã»ã½ã¼ã¹ééä¼é»å§
Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼600V,VGSï¼0V
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
IGSS VGSï¼ Â±30V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼ 23.5A,VDSï¼10V
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StaticDrain-SourceOn-stateResistance
Rï¼DSï¼ON
IDï¼ 23.5A,VGSï¼10V
ã²ã¼ããããå¤é»å§
GateThressholdVoltage
VTH IDï¼ 2.7mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwadeVoltage
VSD
ISï¼ 23.5A,VGSï¼0V
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ThermalResistance
θjc
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Junctiontocase
ã²ã¼ãå
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TotalGateCharge
Qg VGSï¼10V,IDï¼ 47A,VDDï¼400V
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼ 25V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼ 23.5A,VDDï¼150V,RLï¼ 6.3Ω
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼ 10V,VGSï¼ï¼ï¼ï¼ 0V
ä¸éæé
Falltime
tf
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Ratings
ï¼55ï½150
150
600
±30
47
141
47
120
0.8
åä½
Unit
â
V
A
W
Nã»m
è¦æ ¼å¤ Ratings åä½
MIN TYP MAX Unit
600 â â
V
â â 25
μA
â â ±0.1
20 40 â
S
â 0.06 0.07 Ω
2.1 3.0 3.9
V
â â 1.5
â â 1.04 â/W
â 235 â nC
â 7000 â
â 145 â pF
â 2200 â
â 80 â
â 140 â
ns
â 1000 â
â 140 â
ï¼MOSFETã2010.06ãï¼
www.shindengen.co.jp/product/semi/
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