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F39W60CP Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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PowerMOSFET
F39W60CP
600V39A
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Feature
ç
HighVoltage
ç
FastSwitching
ç
LowRON
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Packageï¼MTO-3P
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39W60CP
Unitï¼mm
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4
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Fordetailsoftheoutlinedimensions,refertoourweb site.Asforthe
marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
â絶対æ大å®æ ¼ AbsoluteMaximum Ratingsï¼æå®ã®ãªãå ´å Tcï¼25âï¼
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Item
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Symbol
æ¡ä»¶
Conditions
ä¿å温度
StorageTemperature
ãã£ãã«æ¸©åº¦
ChannelTemperature
ãã¬ã¤ã³ã»ã½ã¼ã¹éé»å§
Drain-SourceVoltage
ã²ã¼ãã»ã½ã¼ã¹éé»å§
Drain-SourceVoltage
ãã¬ã¤ã³é»æµï¼ç´æµï¼
ContinuousDrainCurrent(DC)
ãã¬ã¤ã³é»æµï¼ãã¼ã¯ï¼
ContinuousDrainCurrent(Peak)
ã½ã¼ã¹é»æµï¼ç´æµï¼
ContinuousSourceCurrent(DC)
å
¨æ失
TotalPowerDissipation
ç· ãä»ããã«ã¯
MountingTorque
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
PT
TOR
ï¼æ¨å¥¨å¤ï¼0.5Nã»mï¼
(Recommendedtorque:0.5Nã»m)
è¦æ ¼å¤
Ratings
ï¼55ï½150
150
600
±30
39
117
39
125
0.8
åä½
Unit
â
V
A
W
Nã»m
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼ 25âï¼
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Item
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Symbol
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Conditions
ãã¬ã¤ã³ã»ã½ã¼ã¹ééä¼é»å§
Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼600V,VGSï¼0V
ã²ã¼ãæ¼ãé»æµ
Gate-SourceLeakageCurrent
IGSS VGSï¼ Â±30V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼ 19.5A,VDSï¼10V
ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance
Rï¼DSï¼ON
IDï¼ 19.5A,VGSï¼10V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼ 1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwadeVoltage
VSD
ISï¼ 19.5A,VGSï¼0V
ç±æµæ
ThermalResistance
θjc
æ¥åé¨ã»ã±ã¼ã¹é
Junctiontocase
ã²ã¼ãå
¨é»è·é
TotalGateCharge
Qg VGSï¼10V,IDï¼ 39A,VDDï¼400V
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼ 100V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼ 19.5A,VDDï¼150V,RLï¼ 7.69Ω
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼ 10V,VGSï¼ï¼ï¼ï¼ 0V
ä¸éæé
Falltime
tf
è¦æ ¼å¤ Ratings åä½
MIN TYP MAX Unit
600 â â
V
â â 10
μA
â â ±0.1
16 32 â
S
â 0.068 0.075 Ω
2.5 3.0 3.5
V
â â 1.5
ââ
1 â/W
â 83 â nC
â 4500 â
â
3 â pF
â 220 â
â 64 â
â 100 â
ns
â 296 â
â 88 â
â»ã±ã¼ã¹æ¸©åº¦ã«ããã¸ã£ã³ã¯ã·ã§ã³æ¸©åº¦ãç®åºããå ´åã®ç±æµæå¤ã¯ã0.6ãâ/Wãã御使ç¨ä¸ãããä½ããä¸è¨å°å é»æµãé»å§ã¯å®å
¨åä½é åå
ã§ã®å¾¡ä½¿ç¨ãåæã¨ãã¾ãã
TheJunctionTemperatureiscalculatedfrom thecasetemperature,thermalresistancevalueuses0.6â/W.UseintheSafeOperatingAreaforinputcurrentandvoltage.
ï¼MOS-Pã2011.2ãï¼
www.shindengen.co.jp/product/semi/
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