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F25FH60CP Datasheet, PDF (1/4 Pages) Shindengen Electric Mfg.Co.Ltd – Power MOSFET | |||
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Nch
F25FH60CP
PowerMOSFET
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Packageï¼FH
Unitï¼mm
600V25A
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SMD
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HighVoltage
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FastSwitching
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marking,refertothespecification"Marking,TerminalConnection".
â å®æ ¼è¡¨ RATINGS
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Item
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Symbol
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Conditions
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Ratings
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Unit
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StorageTemperature
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ChannelTemperature
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Drain-SourceVoltage
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GateSourceVoltage
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ContinuousDrainCurrent(DC)
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ContinuousDrainCurrent(Peak)
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ContinuousSourceCurrentï¼DCï¼
å
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TotalPowerDissipation
Tstg
Tch
VDSS
VGSS
ID
IDP
IS
PT
ãã«ã¹å¹
10μs,duty=1/100
Pulsewidth10µs,duty=1/100
ï¼55ï½150
â
150
600
V
±30
25
75
A
25
70
W
âé»æ°çã»ç±çç¹æ§ ElectricalCharacteristicsï¼æå®ã®ãªãå ´å Tcï¼25â/unlessotherwisespecifiedï¼
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Item
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Symbol
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Conditions
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MIN TYP MAX Unit
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Drain-SourceBreakdownVoltage
Vï¼BRï¼DSS IDï¼1mA,VGSï¼0V
ãã¬ã¤ã³é®æé»æµ
ZeroGateVoltageDrainCurrent
IDSS VDSï¼600V,VGSï¼0V
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Gate-SourceLeakageCurrent
IGSS VGSï¼Â±30V,VDSï¼0V
é ä¼éã³ã³ãã¯ã¿ã³ã¹
ForwardTransconductance
gfs IDï¼12.5A,VDSï¼10V
ãã¬ã¤ã³ã»ã½ã¼ã¹éãªã³æµæ
StaticDrain-SourceOn-stateResistance
Rï¼DSï¼ON
IDï¼12.5A,VGSï¼10V
ã²ã¼ããããå¤é»å§
GateThresholdVoltage
VTH IDï¼1mA,VDSï¼10V
ã½ã¼ã¹ã»ãã¬ã¤ã³éãã¤ãªã¼ãé é»å§
Source-DrainDiodeForwardVoltage
VSD
ISï¼12.5A,VGSï¼0V
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ThermalResistance
θjc
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Junctiontocase
ã²ã¼ãå
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TotalGateCharge
Qg VDDï¼400V,VGSï¼10V,IDï¼25A
å
¥å容é
InputCapacitance
Ciss
帰é容é
ReverseTransferCapacitance
Crss VDSï¼100V,VGSï¼0V,fï¼1MHz
åºå容é
OutputCapacitance
Coss
ã¿ã¼ã³ãªã³é
延æé
Turn-ondelaytime
tdï¼onï¼
ä¸ææé
Risetime
tr IDï¼12.5A,RLï¼12Ω,VDDï¼150V,Rgï¼50Ω,
ã¿ã¼ã³ãªãé
延æé
Turn-offdelaytime
tdï¼offï¼ VGSï¼ï¼ï¼ï¼10V,VGSï¼ï¼ï¼ï¼0V
éä¸æé
Falltime
tf
600
â
â
10.5
â
2.5
â
â
â
â
â
â
â
â
â
â
ââ
V
â 10
μA
â ±0.1
21.0 â
S
0.110 0.125 Ω
3.0 3.5
V
â 1.5
â 1.78 â/W
53 â nC
2500 â
2.5 â pF
120 â
45 â
70 â
ns
185 â
60 â
ï¼MOS-pã2014.03ãï¼
www.shindengen.co.jp/product/semi/
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