D30XBN20_10 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – SBD Bridge

SBD Bridge
D30XBN20
200V 30A
特長
• 薄型 SIP パッケージ
• SBD ブリッジ
• 低 VF・低 IR
Feature
• Thin-SIP
• SBD Bridge
• Low VF・Low IR
■定格表　RATINGS
シングルインライン型
Single In-line Package
■外観図　OUTLINE
Package：5S
Unit : mm
Weight : 7.1g（typ.）
඼໊
5ZQF
/P
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$POUSPM
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%BUF
DPEF
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ᶃ ᶄᶅ ᶆ
D30XBN 20 0264


ʙʙʵ

ᶃ
ᶄᶅᶆ
外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Short Form Catalog. As for the marking, refer to the specification “Marking,
Terminal Connection.”
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Item
อଘԹ౓
Storage Temperature
઀߹෦Թ౓
Operation Junction Temperature
ͤΜ಄ిٯѹ
Maximum Reverse Voltage
ग़ྗిྲྀ
Average Rectified Forward Current
ͤΜ಄αʔδॱిྲྀ
Peak Surge Forward Current
ઈԑ଱ѹ
Dielectric Strenght
కΊ෇͚τϧΫ
Mounting Torque
߸ه
৚ɹ݅
Symbol _Conditions
඼ɹ໊
Type
No.
5TUH
5K
73.
*0
*'4.
7EJT
503
)[
ਖ਼ݭ೾ɼ఍߅ෛՙ
50Hz sine wave, Resistance load
ϑΟϯ෇͖
With heatsink
ϑΟϯͳ͠
Without heatsink
5D  ˆ
5B  ˆ
)[
ਖ਼ݭ೾ɼඇ܁Γฦ̍͠αΠΫϧͤΜ಄஋ɼ5K  ˆ
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25ˆ
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Terminals to Case, AC 1 minute
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ʢRecommended torque : 0.5 Nɾmʣ
D30XBN20
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Unit
ˆ
ˆ
7
"
"
L7
/ɾN
ॱిѹ
Forward Voltage
ྲྀిٯ
Reverse Current
઀߹༰ྔ
Junction Capacitance
೤఍߅
Thermal Resistance
7'
*3
$K
ВKD
ВKl
ВKB
*'  "
ύϧεଌఆɼ̍ૉࢠ౰ͨΓͷ֨ن஋
Pulse measurement, per diode
73  7
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Pulse measurement, per diode
G  .)[
73  7
̍ૉࢠ౰ͨΓͷ֨ن஋
per diode
઀߹෦ɾέʔεؒɼϑΟϯ෇͖
Junction to Case, With heatsink
઀߹෦ɾϦʔυؒ
Junction to Lead
઀߹෦ɾ
पғؒ
Junction to Ambient

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