D20XBS6_10 Datasheet, PDF (1/2 Pages) Shindengen Electric Mfg.Co.Ltd – SBD Bridge

SBD Bridge
D20XBS6
60V 20A
特長
• 薄型 SIP パッケージ
• SBD ブリッジ
• 低 VF
Feature
• Thin-SIP
• SBD Bridge
• Low VF
■定格表　RATINGS
シングルインライン型
Single In-line Package
■外観図　OUTLINE
Package：5S
Unit : mm
Weight : 7.4g（typ.）
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D20XBS60264


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外形図については新電元 Web サイト又は〈半導体製品一覧表〉をご参照下
さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Short Form Catalog. As for the marking, refer to the specification “Marking,
Terminal Connection.”
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Item

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Symbol _Conditions
඼ɹ໊

Type
No.
อଘԹ౓

Storage Temperature
઀߹෦Թ౓

Operation Junction Temperature
ͤΜ಄ిٯѹ

Maximum Reverse Voltage
܁Γฦͤ͠Μ಄αʔδిٯѹ

Repetitive Peak Surge Reverse Voltage
ग़ྗిྲྀ

Average Rectified Forward Current
ͤΜ಄αʔδॱిྲྀ

Peak Surge Forward Current
܁Γฦͤ͠Μ಄αʔδ
ྗిٯ
Repetitive Peak Surge Reverse Power
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Dielectric Strength
కΊ෇͚τϧΫ

Mounting Torque
5TUH

5K

73.

7334.

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Pulse width 0.5ms, duty 1/40
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50Hz sine wave, Resistance load
ϑΟϯ෇͖

With heatsink
ϑΟϯͳ͠

Without heatsink
5D  ˆ

5B  ˆ

*'4.

)[
ਖ਼ݭ೾ɼඇ܁Γฦ͠αΠΫϧͤΜ಄஋ɼ5K  ˆ

50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25ˆ

1334.

ύϧε෯ЖTɼ̍ૉࢠ౰ͨΓͷ֨ن஋ɼ5K  ˆ
Pulse width 10Жs, per diode, Tj = 25ˆ
7EJT

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Terminals to Case, AC 1 minute
503

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ʢRecommended torque : 0.5 Nɾmʣ

D20XBS6
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Unit
ˆ
ˆ
7
7
"
"
8
L7
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Forward Voltage

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Reverse Current
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Junction Capacitance
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Thermal Resistance
7'

*3

$K

ВK
D

ВKl
ВKB

*'  "

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Pulse measurement, per diode
73  7

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Pulse measurement, per diode
G  .)[
73  7

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per diode
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Junction to Case, With heatsink
઀߹෦ɾϦʔυؒ

Junction to Lead
઀߹෦ɾ
पғؒ

Junction to Ambient


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