AO7600 Datasheet, PDF (7/7 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO7600
Complementary Enhancement Mode Field
Effect Transistor
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V_DS=-10V
I_D=-0.6A
4
200
C_iss
150
3
100
2
C_oss
1
50
C_rss
0
0.0
0.5
1.0
1.5
2.0
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
-V_DS (Volts)
Figure 8: Capacitance Characteristics
10.00
T_J(Max)=150°C, T_A=25°C
1.00
R_DS(ON)
limited
0.10
1s
10s
0.01
1ms
10ms
0.1s
DC
10µs
100µs
0.00
0.1
1
10
100
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
14
T_J(Max)=150°C
12
T_A=25°C
10
8
6
4
2
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
R_θJA=415°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P_D
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
7/7
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