AO3701 Datasheet, PDF (5/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO3701
P-Channel Enhancement Mode Field
Effect Transistor with Schottky Diode
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY
10
125°C
1
0.1
0.01
25°C
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F (Volts)
Figure 12: Schottky Forward Characteristics
100
f = 1MHz
80
60
40
20
0
0
5
10
15
20
V_KA (Volts)
Figure 13: Schottky Capacitance Characteristics
0.5
1.0E-02
0.4
1.0E-03
I_F=0.5A
0.3
1.0E-04
V_R=16V
0.2
1.0E-05
0.1
0
25
50
75
100 125 150
Temperature (°C)
Figure 14: Schottky Forward Drop vs.
Junction Temperature
1.0E-06
0
25 50 75 100 125 150
Temperature (°C)
Figure 15: Schottky Leakage current vs. Junction
Temperature
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=135°C/W
1
0.1
0.01
0.00001
Single Pulse
P_D
T_on
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Schottky Normalized Maximum Transient Thermal Impedance
1000
5/5
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