SUD45P03-09 Datasheet, PDF (4/8 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

SUD45P03-09
P-Channel 30 V (D-S) MOSFET
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
- 1.0
T_J = 150 °C
10
T_J = 25 °C
1
- 1.3
- 1.6
- 1.9
I_D = 250 µA
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4000
3000
C_iss
- 2.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
- 33
I_D = 250 µA
- 34
2000
- 35
1000
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.5
V_GS = 10 V
1.2
V_GS = 4.5 V
0.9
- 36
- 37
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
60
45
Package Limited
30
15
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
4/8
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