SUD15N15-95 Datasheet, PDF (4/7 Pages) Vishay Siliconix – SPICE Device Model SUD15N15-95

TYPICAL CHARACTERISTICS (25 °C unless noted)
2.8
V_GS = 10 V
2.4
I_D = 15 A
2.0
1.6
1.2
0.8
0.4
0.0
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
20
SUD15N15-95
N-Channel
150 V (D-S) 175 °C MOSFET
100
T_J = 150 °C
10
T_J = 25 °C
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
10 µs
15
Limited by R_DS(on)*
10
100 µs
10
5
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1 _{Duty Cycle = 0.5}
1
T_C = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, DC
0.1 _0.1
1
10
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
4/7
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