SQ3442EV Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 20 V (D-S) 175 °C MOSFET

SQ3442EV
Automotive N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
6
1.7
5
I_D = 4 A
V_DS = 10 V
4
3
2
I_D = 4 A
1.5
1.3
1.1
V_GS = 4.5 V
V_GS = 2.5 V
0.9
1
0
0
1
2
3
4
5
6
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.25
10
0.20
T_J = 150 °C
1
0.15
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.10
T_J = 150 °C
0.05
T_J = 25 °C
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.2
I_D = 250 μA
0.0 I_D = 5 mA
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
28
I_D = 1 mA
27
26
25
24
23
22
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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