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SQ3418EEV Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQ3418EEV
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.15
0.12
1000
Ciss
800
0.09
0.06
0.03
VGS = 4.5 V
VGS = 10 V
0.00
0
6
12
18
24
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
5
4
ID = 4 A
VDS = 20 V
3
2
600
400
Coss
200
Crss
0
0 5 10 15 20 25 30 35 40
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 5 A
1.7
1.4
VGS = 10 V
1.1
1
0.8
0
0
100
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.25
10
0.20
TJ = 150 °C
1
0.15
0.1
0.01
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.10
TJ = 150 °C
0.05
0.00
0
TJ = 25 °C
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
4 / 11
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