SQ3410EV Datasheet, PDF (4/11 Pages) Vishay Siliconix – Automotive N-Channel 30 V (D-S) 175 °C MOSFET

SQ3410EV
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
2.0
I_D = 5 A
8
I_D = 5 A
1.7
V_GS = 10 V
6
1.4
V_GS = 4.5 V
V_DS = 15 V
4
1.1
2
0.8
0
0
100
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.15
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.5
0.2
0.12
0.09
0.06
0.03
T_J = 150 °C
0.00
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
40
I_D = 1 mA
38
- 0.1
- 0.4
- 0.7
36
I_D = 5 mA
34
I_D = 250 μA
32
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
30
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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