IRFR9024N Datasheet, PDF (4/10 Pages) Kersemi Electronic Co., Ltd. – Ultra Low On-Resistance

700
V _GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
600
C _rss = C_{g d}
C oss = Cds + C gd
500
C _{is s}
400
C _oss
300
200
Crs s
100
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
IRFR/U9024N
20
I _D = -7.2A
16
V _DS = -44V
V _DS = -28V
12
8
4
FOR TE ST CIRCUIT
SE E FIGURE 13
0
A
0
5
10
15
20
25
Q _G , Total G ate C harge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150^°C
10
T_J = 25 °C
1
0.1
0.2
V_GS = 0 V
0.6
0.9
1.3
1.6
-V_SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4 /10
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