AON4407 Datasheet, PDF (4/5 Pages) Alpha & Omega Semiconductors – Plastic Encapsulated Device

AON4407
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
V_DS=-6V
3.5
I_D=-9A
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
2800
2400
2000
C_iss
1600
1200
800
C_oss
400
C_rss
0
0
2
4
6
8
10
12
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100
10µs
10
R_DS(ON)
limited
1ms
10ms
1
DC
0.1
T_J(Max)=150°C
T_A=25°C
100ms
10s
0.01
0.01
0.1
1 ^IF=-6.51^A0^{, dI/dt=10}1⁰0^A0 ^/µs
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1000
100
T_J(Max)=150°C
T_A=25°C
10
1
0.00001 0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1
R_θJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPD^D OES NOT ASSUME ANY LIABILITY ARISING
OUT OF SU0C.0H1 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TTO_onIMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
4/5
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