AOD4128 Datasheet, PDF (4/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=12.5V
8
I_D=20A
6
4
2
0
0
10
20 30
40 50
60 70
Q_g (nC)
Figure 7: Gate-Charge Characteristics
5000
4500
4000
C_iss
3500
3000
2500
2000
1500
C_oss
1000
500
C_rss
0
0
5
10
15
20
25
V_DS (Volts)
Figure 8: Capacitance Characteristics
1000
100 ^RDS(ON)
limited
10
10us
100us
1ms
DC
10ms
1
T_J(Max)=175°C
T_C=25°C
0.1
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=T_on/T
T_J,PK=T_C+P_DM.Z_θJC.R_θJC
R_θJC=2°C/W
1
500
T_J(Max)=175°C
T_C=25°C
400
300
200
100
0
1E-05 1E-04 0.001 0.01 0.1 1
Pulse Width (s)
10 100
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, single pulse
0.1
P_D
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T_on
T
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
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