AO3434 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3434
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V_DS=15V
8
I_D=4.2A
6
500
400
C_iss
300
4
2
0
0
1
2
3
4
5
6
Q_g (nC)
Figure 7: Gate-Charge Characteristics
200
C_oss
100
0 ^Crss
0
5
10
15
20
25
30
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
R_DS(ON)
limited
10µs
100µ
1.0
1m
10ms
0.1
T_J(Max)=150°C
DC
T_A=25°C
0.1s
10s
0.0
0.01
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
30
25
T_J(Max)=150°C
T_A=25°C
20
15
10
5
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=125°C/W
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONEN0.T1S IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPD_D OES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T_on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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