AO3414 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
800
V_DS=10V
4
I_D=4.2A
600
3
400
2
200
C_oss
1
C_iss
C_rss
0
0
2
4
6
8
Q_g (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
V_DS (Volts)
Figure 8: Capacitance Characteristics
100.0
T_J(Max)=150°C
T_A=25°C
100µs
10.0 _RDS(ON)
limited
1ms
10µs
0.1s
1.0
10ms
1s
10s
DC
0.1
0.1
1
10
100
V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
20
T_J(Max)=150°C
T_A=25°C
15
10
5
0
0.001 0.01 0.1
1
10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
In descending order
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R_θJA=90°C/W
1
0.1
P_D
Single Pulse
T_on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
4/4
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