AO3407 Datasheet, PDF (4/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
8
V_DS=-15V
I_D=-4.3A
6
4
2
0
0
3
6
9
12
15
-Q_g (nC)
Figure 7: Gate-Charge Characteristics
1000
C_iss
800
600
400
C_oss
200
C_rss
0
0
6
12
18
24
30
-V_DS (Volts)
Figure 8: Capacitance Characteristics
100
10 ^RDS(ON)
limited
10µs
100µs
1 _{TJ(Max)=150°C}
T_A=25°C
1ms
10ms
0.1
0.1
DC
1
1s
100ms
I_F=-₁6₀.5A, dI/dt=100₁₀A₀/ µs
-V_DS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
30
T_J(Max)=150°C
24
T_A=25°C
18
12
6
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=T_on/T
T_J,PK=T_A+P_DM.Z_θJA.R_θJA
1
R_θJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOP^DES NOT ASSUME ANY LIABILITY ARISING
OUT OF SU0C.0H1APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO ITM_onPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOSUinTgNleOPTuIlCseE.
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
1000
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