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IRF1404 Datasheet, PDF (3/9 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥)
IRF1404
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
10
4.5V
20µs PULSE WIDTH
TJ = 175°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 25°C
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
10
4 5 6 7 8 9 10 11 12
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2.5 ID = 202A
2.0
1.5
1.0
0.5
VGS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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