AON3816 Datasheet, PDF (3/5 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON3816
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
3V
4V
30
20
V_DS=5V
15
20
2V
10
V_GS=1.5V
0
0
1
2
3
4
5
V_DS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
25
V_GS=2.5V
20
15
10
V_GS=4.5V
V_GS=3.1V
5
0
5
10
15
20
I_D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
5
125°C
25°C
0
0
0.5
1
1.5
2
2.5
V_GS(Volts)
Figure 2: Transfer Characteristics (Note E)
1.8
V_GS=2.5V I_D=4A
1.6
V_GS=4V I_D=4A
1.4
17
V_GS=4.5V I_D=₅4A
1.2
2
10
1
0.8
0
25 50 75 100 125 150 175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junctio₁n₈Temperature
(Note E)
40
35
I_D=4A
30
125°
25
20
15
10
25°
5
0
2
4
6
8
10
V_GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E+02
1.0E+01
40
1.0E+00
1.0E-01
125°
25°
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V_SD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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