AO4607 Datasheet, PDF (3/8 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO4607
N-Channel + Schottky Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
R_DS(ON) Static Drain-Source On-Resistance
I_D=250µA, V_GS=0V
30
V_R=30V
V_R=30V, T_J=125°C
V_R=30V, T_J=150°C
V_DS=0V, V_GS=±20V
V_DS=V_GS I_D=250µA
1
V_GS=4.5V, V_DS=5V
20
V_GS=10V, I_D=6.9A
T_J=125°C
V_GS=4.5V, I_D=5.0A
g_FS
Forward Transconductance
V_DS=5V, I_D=6.9A
10
V_SD
Body-Diode+Schottky Forward Voltage
I_S=1A
I_S
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance (FET+Schottky)
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
t_D(off)
Turn-Off DelayTime
t_f
Turn-Off Fall Time
t_rr
Body-Diode+Schottky Reverse Recovery Time
Q_rr
Body-Diode+Schottky Reverse Recovery Charge
V_GS=10V, V_DS=15V, I_D=6.9A
V_GS=10V, V_DS=15V, R_L=2.2Ω,
R_GEN=3Ω
I_F=6.9A, dI/dt=100A/µs
I_F=6.9A, dI/dt=100A/µs
Typ
0.007
3.2
12
1.9
22.5
31.3
34.5
15.4
0.45
680
131
77
3
13.84
6.74
1.82
3.2
4.6
4.1
20.6
5.2
13.7
4.1
Max
0.05
10
20
100
3
28
38
42
0.5
5.5
820
3.6
16.6
16.5
Units
V
mA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R _θJA is measured with the device mounted on 1in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The value in any
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The SOA curve provides
a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance
and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately
Rev 4: Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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