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| SUD40N06-25L Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level | |||
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SUD40N06-25L
N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 40 A
VDD = 30 V, RL = 0.9 W
ID ^ 20 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
ISM
VSD
IF = 20 A, VGS = 0 V
trr
IF = 20 A, di/dt = 100 A/ms
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
60
V
1.0
2.0
3.0
"100
nA
1
50
mA
150
20
A
0.022
0.043
W
0.053
0.025
S
1800
350
pF
100
40
60
9
nC
10
10
20
9
20
ns
28
50
7
15
20
A
1.0
1.5
V
48
100
ns
2/5
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