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SUD40N02-08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S), 175C MOSFET
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SUD40N02-08
N-Channel
20 V (D-S) 175 ??C MOSFET
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 20 A
VGS = 4.5 V, ID = 20 A, TJ = 125_C
VGS = 2.5 V, ID = 20 A
VDS = 5 V, ID = 40 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 20 V, f = 1 MHz
VDS = 10 V, VGS = 4.5 V, ID = 40 A
VDD = 10 V, RL = 0.25 W
ID ^ 40 A, VGEN = 4.5 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
Source-Drain Reverse Recovery Time
trr
IF = 100 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
Min Typa Max Unit
20
V
0.6
"100
nA
1
mA
50
40
A
0.0068 0.0085
0.0104 0.013
W
0.011
0.014
20
S
2660
730
pF
375
26
35
5
nC
7
1
3.7
W
20
35
120
190
ns
45
70
20
35
100
A
1.2
1.5
V
35
70
ns
2/5
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