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SQD50P08-25L Datasheet, PDF (2/9 Pages) Vishay Siliconix – Automotive P-Channel 80 V (D-S) 175 °C MOSFET
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SQD50P08-25L
Automotive P-Channel
80 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VGS = 0 V
VDS = - 80 V
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V VDS = - 80 V, TJ = 125 °C
On-State Drain Currenta
ID(on)
VGS = 0 V
VGS = - 10 V
VDS = - 80 V, TJ = 175 °C
VDS- 5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 10 V
VGS = - 10 V
ID = - 12.5 A
ID = - 12.5 A, TJ = 125 °C
ID = - 12.5 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = - 4.5 V
ID = - 10.5 A
gfs
VDS = - 15 V, ID = - 12.5 A
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0 V
VDS = - 25 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Crss
Qg
Qgs
VGS = - 10 V VDS = - 40 V, ID = - 12.5 A
Qgd
Gate Resistance
Rg
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
f = 1 MHz
VDD = - 40 V, RL = 3.2 
ID  - 12.5 A, VGEN = - 10 V, Rg = 1 
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 10.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




MIN.
- 80
- 1.5
-
-
-
-
- 50
-
-
-
-
-
-
-
-
-
-
-
1.60
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
- 2.0 - 2.5
-
± 100 nA
-
-1
-
- 50 μA
-
- 250
-
-
A
0.020 0.025
-
0.044

-
0.055
0.025 0.031
38
-
S
4279 5350
356 445 pF
239 300
91
137
8.2
-
nC
24
-
3.26 5.00

10
15
11
17
ns
71
107
16
24
-
- 120 A
- 0.82 - 1.5
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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