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SQ1470EH Datasheet, PDF (2/11 Pages) Vishay Siliconix – Automotive N-Channel 30 V (D-S) 175 °C MOSFET
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SQ1470EH
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 12 V
VGS = 0 V
VDS = 30 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VGS = 0 V
VGS = 0 V
VGS = 4.5 V
VDS = 30 V, TJ = 125 °C
VDS = 30 V, TJ = 175 °C
VDS5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V
VGS = 4.5 V
VGS = 4.5 V
ID = 3.8 A
ID = 3.8 A, TJ = 125 °C
ID = 3.8 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
VGS = 2.5 V
ID = 3.1 A
gfs
VDS = 15 V, ID = 2 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V
VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Crss
Qg
Qgs
VGS = 4.5 V
VDS = 15 V, ID = 3.8 A
Qgd
Rg
f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
tr
Turn-Off Delay Timec
td(off)
Fall Timec
tf
Source-Drain Diode Ratings and Characteristicsb
VDD = 15 V, RL = 3.9 
ID  3.8 A, VGEN = 4.5 V, Rg = 1 
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 2.5 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
30
0.6
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
-
3
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
1.0
1.6
-
± 500 nA
-
1
-
50
μA
-
150
-
-
A
0.050 0.065
-
0.097

-
0.115
0.070 0.095
8
-
S
488 610
60
75
pF
36
45
4.4
6.6
1
-
nC
1
-
6.35 9.7

8
12
13
20
ns
14
21
8
12
-
11
A
0.8
1.2
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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