IRFR9120N Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – Ultra Low On-Resistance

IRFR/U9120N
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-100 ––– ––– V V_GS = 0V, I_D = -250µA
––– -0.11 ––– V/°C Reference to 25°C, I_D = -1mA
––– ––– 0.48 Ω V_GS = -10V, I_D = -3.9A „
-2.0 ––– -4.0 V V_DS = V_GS, I_D = -250µA
1.4 ––– ––– S V_DS = -50V, I_D = -4.0A†
––– ––– -25 _µA V_DS = -100V, V_GS = 0V
––– ––– -250
V_DS = -80V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 27
I_D = -4.0A
––– ––– 5.0
––– ––– 15
nC V_DS = -80V
V_GS = -10V, See Fig. 6 and 13 „†
––– 14 –––
V_DD = -50V
––– 47 ––– _ns I_D = -4.0A
––– 28 –––
R_G = 12 Ω
––– 31 –––
R_D =12 Ω, See Fig. 10 „†
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact…
S
––– 350 –––
V_GS = 0V
––– 110 ––– pF V_DS = -25V
––– 70 –––
ƒ = 1.0MHz, See Fig. 5†
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -6.6 _{A showing the}
integral reverse
G
––– ––– -26
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -3.9A, V_GS = 0V „
––– 100 150 ns T_J = 25°C, I_F = -4.0A
––– 420 630 nC di/dt = 100A/µs „†
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 13mH
R_G = 25Ω, I_AS = -3.9A. (See Figure 12)
ƒ I_SD ≤ -4.0A, di/dt ≤ 300A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact
† Uses IRF9520N data and test conditions.
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