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IRF2804 Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF2804
IRF2804S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
âÎVDSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on) SMD Static Drain-to-Source On-Resistance
RDS(on) TO-220 Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
40 âââ âââ
âââ 0.031 âââ
âââ 1.5 2.0
âââ 1.8 2.3
2.0 âââ 4.0
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
f m⦠VGS = 10V, ID = 75A
f VGS = 10V, ID = 75A
V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
130 âââ âââ S VDS = 10V, ID = 75A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 40V, VGS = 0V
âââ âââ 250
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 160 240 nC ID = 75A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ 41 62
âââ 66 99
f VDS = 32V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 13 âââ ns VDD = 20V
tr
Rise Time
âââ 120 âââ
ID = 75A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ 130 âââ
âââ 130 âââ
f RG = 2.5â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ nH Between lead,
D
LS
Internal Source Inductance
6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
Parameter
IS
Continuous Source Current
âââ 6450 âââ
âââ 1690 âââ
âââ 840 âââ
âââ 5350 âââ
âââ 1520 âââ
âââ 2210 âââ
and center of die contact
S
pF VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 32V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
âââ âââ 280
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
A showing the
âââ âââ 1080
integral reverse
G
âââ âââ 1.3
âââ 56 84
âââ 67 100
f p-n junction diode.
S
V TJ = 25°C, IS = 75A, VGS = 0V
f ns TJ = 25°C, IF = 75A, VDD = 20V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25°C,
 Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
 This value determined from sample failure population. 100%
L=0.24mH, RG = 25â¦, IAS = 75A, VGS =10V.
tested to this value in production.
Part not recommended for use above this value.
 ISD ⤠75A, di/dt ⤠220A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C.
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same
 This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
 Max RDS(on) for D2Pak and TO-262 (SMD) devices.
charging time as Coss while VDS is rising from 0 to 80%
VDSS.
2 / 12
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