AON7462 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – 300V,2.5A N-Channel MOSFET

AON7462
300V,2.5A N-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS
BV_DSS
/∆TJ
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
I_D=250µA, V_GS=0V, T_J=25°C
I_D=250µA, V_GS=0V, T_J=150°C
ID=250µA, VGS=0V
300
350
0.3
V
V/ ^oC
I_DSS
I_GSS
V_GS(th)
R_DS(ON)
g_FS
V_SD
I_S
I_SM
Zero Gate Voltage Drain Current
V_DS=300V, V_GS=0V
V_DS=240V, T_J=125°C
Gate-Body leakage current
Gate Threshold Voltage
V_DS=0V, V_GS=±30V
V_DS=5V I_D=250µA
Static Drain-Source On-Resistance
V_GS=10V, I_D=0.9A
Forward Transconductance
V_DS=40V, I_D=0.9A
Diode Forward Voltage
I_S=1A,V_GS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
1
µA
10
±100 nΑ
3.5 4.2 4.5
V
1.2 1.5
Ω
1.5
S
0.8
1
V
2.5
A
9
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=25V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
155 197 240 pF
20
30
40
pF
2
pF
1.9 3.8 5.7
Ω
SWITCHING PARAMETERS
Q_g
Total Gate Charge
Q_gs
Gate Source Charge
Q_gd
Gate Drain Charge
t_D(on)
Turn-On DelayTime
t_r
Turn-On Rise Time
t_D(off)
Turn-Off DelayTime
t_f
Turn-Off Fall Time
t_rr
Body Diode Reverse Recovery Time
Q_rr
Body Diode Reverse Recovery Charge
V_GS=10V, V_DS=240V, I_D=0.9A
V_GS=10V, V_DS=150V, I_D=0.9A,
R_G=25Ω
I_F=0.9A,dI/dt=100A/µs,V_DS=100V
I_F=0.9A,dI/dt=100A/µs,V_DS=100V
3.5 4.6 5.6 nC
1.3
nC
1.5
nC
17
ns
8
ns
26
ns
13
ns
62
95 125 _ns
0.14 0.22 0.3 µC
A. The value of R_θJA is measured with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The Power
Dissipation P_DSM is based on R_θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T_J
=25°C.
D. The R_θJA is the sum of the thermal impedence from junction to case R _θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T _J(MAX)=150°C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in ² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
H. L=60mH, I_AS=1.4A, V_DD=150V, R_G=10Ω, Starting T_J=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
www.freescale.net.cn