AON7401 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AON7401
30V P-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-30
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=-30V, V_GS=0V
T_J=55°C
-1
µA
-5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±25V
±100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-1.7 -2.2 -3
V
I_D(ON)
On state drain current
V_GS=-10V, V_DS=-5V
-80
A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=-10V, I_D=-9A
T_J=125°C
11
14
mΩ
16
19
V_GS=-6V, I_D=-7A
12.9 17 mΩ
g_FS
Forward Transconductance
V_DS=-5V, I_D=-9A
27
S
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
-0.7 -1
V
I_S
Maximum Body-Diode Continuous Current
-25
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
2060 2600 pF
370
pF
295
pF
2.4 3.6
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
30
39
nC
Q_gs
Gate Source Charge
V_GS=-10V, V_DS=-15V, I_D=-9A
4.6
nC
Q_gd
Gate Drain Charge
10
nC
t_D(on)
Turn-On DelayTime
11
ns
t_r
Turn-On Rise Time
V_GS=-10V, V_DS=-15V, R_L=1.6Ω,
9.4
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
24
ns
t_f
Turn-Off Fall Time
12
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=-9A, dI/dt=500A/µs}
14
18
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=-9A, dI/dt=500A/µs}
35
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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