AON2400 Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – 8V N-Channel MOSFET

AON2400
8V N-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
8
I_DSS
Zero Gate Voltage Drain Current
V_DS=8V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±5V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_D=250µA
I_D(ON)
On state drain current
V_GS=4.5V, V_DS=5V
32
V_GS=2.5V, I_D=8A
T_J=125°C
R_DS(ON) Static Drain-Source On-Resistance V_GS=1.8V, I_D=6A
V_GS=1.5V, I_D=5A
V_GS=1.2V, I_D=3A
g_FS
Forward Transconductance
V_DS=5V, I_D=8A
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=4V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V_GS=4.5V, V_DS=4V, I_D=8A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=4.5V, V_DS=4V, R_L=0.5Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=8A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=8A, dI/dt=100A/µs}
Typ Max Units
V
1
µA
5
±100 nA
0.46
V
A
8.5 11
mΩ
11
14
10
13 mΩ
11.5 16 mΩ
16
23 mΩ
100
S
0.53 1
V
4.5
A
1645
pF
470
pF
320
pF
1.6 3.2
Ω
16
nC
2
nC
2.8
nC
7
ns
25
ns
37
ns
13
ns
17
ns
9
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C.
The Power dissipation P_DSM is based on R _θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any
given application depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial T_J =25°C.
D. The R_θJA is the sum of the thermal impedance from junction to case R_θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C.
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