AO4486 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – 100V N-Channel MOSFET

AO4486
100V N-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
100
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=100V, V_GS=0V
T_J=55°C
1
µA
5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±20V
±100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1.6 2.2 2.7
V
I_D(ON)
On state drain current
V_GS=10V, V_DS=5V
31
A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=3A
T_J=125°C
62.5 79
mΩ
121 151
V_GS=4.5V, I_D=3A
68.5 90 mΩ
g_FS
Forward Transconductance
V_DS=5V, I_D=3A
20
S
V_SD
Diode Forward Voltage
I_S=1A,V_GS=0V
0.74 1
V
I_S
Maximum Body-Diode Continuous Current
3.5
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=50V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
620 778 942 pF
38
55
81
pF
13
24
35
pF
0.7 1.45 2.2
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
13 16.3 20 nC
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
V_GS=10V, V_DS=50V, I_D=3.0A
6.4 8.1 10 nC
2.2 2.8 3.4 nC
Q_gd
Gate Drain Charge
2.4 4.1 5.8 nC
t_D(on)
Turn-On DelayTime
6
ns
t_r
Turn-On Rise Time
V_GS=10V, V_DS=50V, R_L=16.7Ω,
2.5
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
21
ns
t_f
Turn-Off Fall Time
2.4
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=3A, dI/dt=500A/µs}
14
21
28
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=3A, dI/dt=500A/µs}
65
94 123 nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT_J=25°C.
D. The R_θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.
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