AO4427 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO4427
30V P-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
V_GS(th)
I_D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
I_D=-250µA, V_GS=0V
-30
V
V_DS=-30V, V_GS=0V
T_J=55°C
-1
µA
-5
V_DS=0V, V_GS=±25V
±10 µA
V_DS=V_GS I_D=-250µA
-1.7 -2.5 -3
V
V_GS=-10V, V_DS=-5V
-60
A
R_DS(ON)
g_FS
V_SD
I_S
V_GS=-20V, I_D=-12.5A
Static Drain-Source On-Resistance
V_GS=-10V, I_D=-10A
V_GS=-4.5V, I_D=-5A
Forward Transconductance
V_DS=-5V, I_D=-12.5A
Diode Forward Voltage
I_S=-1A,V_GS=0V
Maximum Body-Diode Continuous Current
T_J=125°C
9.4
12
mΩ
12.2 15
11.5 14 mΩ
32
mΩ
24
S
-1
V
-4.2 A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
2330 2900 pF
480
pF
320 448 pF
3.4 6.8 10
Ω
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V_GS=-10V, V_DS=-15V,
I_D=-12.5A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=-10V, V_DS=-15V, R_L=1.2Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=-12.5A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=-12.5A, dI/dt=100A/µs}
41
52
nC
10
nC
12
nC
12.8
ns
10.3
ns
49.5
ns
29
ns
28
35
ns
20
nC
A: The value of R _θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T _A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R _θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T _A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev8: Nov. 2010
2/4
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