AO3419 Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO3419
20V P-Channel MOSFET
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-20
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=-20V, V_GS=0V
T_J=55°C
-1
µA
-5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±12V
±10 µA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_D=-250µΑ
-0.5 -0.85 -1.2 V
I_D(ON)
On state drain current
V_GS=-4.5V, V_DS=-5V
-17
A
V_GS=-10V, I_D=-3.5A
T_J=125°C
71
85
mΩ
99 119
R_DS(ON) Static Drain-Source On-Resistance V_GS=-4.5V, I_D=-3A
85 102 mΩ
V_GS=-2.5V, I_D=-1A
112 140 mΩ
V_GS=-1.8V, I_D=-0.5A
168
mΩ
g_FS
Forward Transconductance
V_DS=-5V, I_D=-3.5A
8.6
S
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
-0.76 -1
V
I_S
Maximum Body-Diode Continuous Current
-1.5 A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
250 325 400 pF
40
63
85
pF
22
37
52
pF
11.2 17
Ω
SWITCHING PARAMETERS
Q_g
Total Gate Charge
3.1 4.4 nC
Q_gs
Gate Source Charge
V_GS=-4.5V, V_DS=-10V, I_D=-3.5A
0.6
nC
Q_gd
Gate Drain Charge
1.1
nC
t_D(on)
Turn-On DelayTime
11
ns
t_r
Turn-On Rise Time
V_GS=-10V, V_DS=-10V, R_L=2.8Ω,
5.5
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
22
ns
t_f
Turn-Off Fall Time
8
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=-3.5A, dI/dt=100A/µs}
11
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=-3.5A, dI/dt=100A/µs}
4.3
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT_J=25°C.
D. The R_θJA is the sum of the thermal impedance from junction to lead R_θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in² FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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