AO3413 Datasheet, PDF (2/6 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO3413
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BV_DSS
I_DSS
I_GSS
V_GS(th)
I_D(ON)
R_DS(ON)
g_FS
V_SD
I_S
Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-20
Zero Gate Voltage Drain Current
V_DS=-16V, V_GS=0V
T_J=55°C
Gate-Body leakage current
V_DS=0V, V_GS=±8V
Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-0.3
On state drain current
V_GS=-4.5V, V_DS=-5V
-15
V_GS=-4.5V, I_D=-3A
Static Drain-Source On-Resistance
T_J=125°C
V_GS=-2.5V, I_D=-2.6A
V_GS=-1.8V, I_D=-1A
Forward Transconductance
V_DS=-5V, I_D=-3A
4
Diode Forward Voltage
I_S=-1A,V_GS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-10V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
SWITCHING PARAMETERS
Q_g
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Gate Source Charge
V_GS=-4.5V, V_DS=-10V, I_D=-3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=-4.5V, V_DS=-10V, R_L=3.3Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=-3A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=-3A, dI/dt=100A/µs}
Typ Max Units
V
-1
µA
-5
±100 nA
-0.55 -1
V
A
81
97
mΩ
111 135
108 130 ^mΩ
146 190 ^mΩ
7
S
-0.78 -1
V
-2
A
540
pF
72
pF
49
pF
12
Ω
6.1
nC
0.6
nC
1.6
nC
10
ns
12
ns
44
ns
22
ns
21
ns
7.5
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The
SOA curve provides a single pulse rating.
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